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TCD1502C AD766AN 05410 C2012 C100EP TTINY2 1SS35 0603Z
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  sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1 . 6 5 + 0 . 1 5 - 0 . 1 5 0 . 1 m a x 0 . 9 0 + 0 . 0 5 - 0 . 0 5 1 2 4 3 1 base 2 collector 3 emitter cp5 6 features for af drive r and output s tages high collec tor c urre nt low c ollect or-e m itt er saturation voltage absolute maxim um ratings t a = 25 paramet er sym bol rating unit c ollector-base voltage v cbo 100 v c ollector-emi tter voltage v ceo 80 v em itt er- base voltage v ebo 5 v collect or curren t (dc) i c 1 a peak collec tor current (t p < 5m s) i cm 1.5 a pow er dissi pation p d 1.5 w thermal resist ance from junct ion to am bient r ja 94 /w junction t em pera ture t j 150 st orag e tem pera ture tstg -65 to +150 ele ctric al characteristics t a = 2 5 paramet er sym bol testc onditons min typ ma x unit collector-ba se breakdow n voltage v (br)cbo i c = 0.1m a,i e =0 100 collector-emit ter breakdow n voltage v (br)ceo i c = 10m a,i b =0 80 base-em itt er bre akdow n voltage v (br)ebo i c = 10a, i e =0 5 collector cut-off c urr ent i cbo i e = 0 a ; v cb = 30 v 100 na em itt er cut-off current i ebo i c = 0 a ; v eb = 5 v 100 na i c = 5 m a; v ce = 2 v 25 i c =150 m a; v ce = 2 v 100 250 i c = 500 m a; v ce = 2 v 25 collector-emit ter sat uration v oltage v ce(sat) i c = 500m a; i b = 50 m a 0.5 v transition frequency f t i c = 10 m a; v ce = 5 v ; f = 100 mh z 130 mh z dc curre nt gain h fe b 6 -1 mark ing mar king bcp 56 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
transition frequency f t = f ( i c ) v ce = 10v 10 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 total power dissipation p tot = f ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 150 300 450 600 750 900 1050 1200 1350 1500 ma 1800 i f dc current gain h fe = f ( i c ) v ce = 2v 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 c 100 5 25 c -50 c 10 4 collector cutoff current i cbo = f ( t a ) v cb = 30v 0 10 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ typical characteristics cp5 6 b 6 -1 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 cesat v 0.4 v 0.8 10 0 10 1 3 10 c ma c 2 10 0.2 0.6 10 4 100 25 c c -50 base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 -5 10 0 10 s 0 10 2 10 5 5 10 -4 10 -3 10 -2 10 1 5 d = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 tot max tot p dc p p t t p = d t t p t cp5 6 b 6 -1 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123


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